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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">alternative</journal-id><journal-title-group><journal-title xml:lang="ru">Альтернативная энергетика и экология (ISJAEE)</journal-title><trans-title-group xml:lang="en"><trans-title>Alternative Energy and Ecology (ISJAEE)</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1608-8298</issn><publisher><publisher-name>Международный издательский дом научной периодики "Спейс</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.15518/isjaee.2017.13-15.091-099</article-id><article-id custom-type="elpub" pub-id-type="custom">alternative-1046</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭНЕРГЕТИКА И ЭКОЛОГИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ENERGY AND ECOLOGY</subject></subj-group></article-categories><title-group><article-title>АДСОРБЦИЯ МОЛЕКУЛ УГАРНОГО ГАЗА НА ПОВЕРХНОСТИ SnO2</article-title><trans-title-group xml:lang="en"><trans-title>ADSORPTION OF CO GAS MOLECULES ON SnO2 SURFACE</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Арутюнян</surname><given-names>В. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Aroutiounian</surname><given-names>V. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>д-р физ.-мат. наук, академик НАН РА, заместитель кафедры «Физика полупроводников и микроэлектроника»,</p><p>д. 1 , ул. Алека Манукяна, Ереван, 0025</p></bio><bio xml:lang="en"><p>D.Sc. (physics and mathematics), Academician of National Academy of Sciences, Head of Semiconductor and Microelectronics Department,</p><p>1 Alex Manoogian str., Yerevan, 0025</p></bio><email xlink:type="simple">aroutiounv1@yahoo.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Закарян</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Zakaryan</surname><given-names>H. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>аспирант, кафедра «Физика полупроводников и микроэлектроника»,</p><p>д. 1 , ул. Алека Манукяна, Ереван, 0025</p></bio><bio xml:lang="en"><p>Postgraduate, Semiconductor and Microelectronics Department,</p><p>1 Alex Manoogian str., Yerevan, 0025</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Ереванский государственный университет</institution><country>Армения</country></aff><aff xml:lang="en"><institution>Yerevan State University</institution><country>Armenia</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2017</year></pub-date><pub-date pub-type="epub"><day>30</day><month>06</month><year>2017</year></pub-date><volume>0</volume><issue>13-15</issue><fpage>91</fpage><lpage>99</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Международный издательский дом научной периодики "Спейс, 2017</copyright-statement><copyright-year>2017</copyright-year><copyright-holder xml:lang="ru">Международный издательский дом научной периодики "Спейс</copyright-holder><copyright-holder xml:lang="en">Международный издательский дом научной периодики "Спейс</copyright-holder><license xlink:href="https://www.isjaee.com/jour/about/submissions#copyrightNotice" xlink:type="simple"><license-p>https://www.isjaee.com/jour/about/submissions#copyrightNotice</license-p></license></permissions><self-uri xlink:href="https://www.isjaee.com/jour/article/view/1046">https://www.isjaee.com/jour/article/view/1046</self-uri><abstract><p>Исследован механизм адсорбции угарного газа на полупроводнике – диоксиде олова (SnO2). Для объяснения процесса адсорбции использовалась теория функционала плотности (ТФП). Показано, что адсорбция не подчиняется механизму Марс-ван Кревелена для (101) и (001) ориентаций поверхности, в отличие от (110) и (001) ориентаций, где сначала образуется, а затем десорбируется молекула CO2. После адсорбции на (101) и (001) поверхностях, CO связывалась с поверхностью и передавала этой поверхности электроны. Перенос электронов рассчитывался с помощью анализа зарядов (расчет заряда отдельных атомов в молекулах и кристаллах с использованием метода Бейдера), из которого следует, что количество электронов, переданных (101) и (001) поверхностям, больше количества электронов, переданных (110) и (100) поверхностям. При (001) ориентации рассматривались случаи полного и пятидесятипроцентного покрытия поверхности. Показано, что при полном покрытии, только одна молекула CO может адсорбироваться и передавать 2е заряда. Для того чтобы объяснить увеличение проводимости поверхности, была рассчитана электронная плотность состояний.</p></abstract><trans-abstract xml:lang="en"><p>This research is devoted to the investigation of the toxic CO gas adsorption mechanism on the tin dioxide (SnO2) semiconductor. We used density functional theory (DFT) to describe adsorption processes, and we found out that the Mars-van Krevelen (MvK) adsorption mechanism is not responsible for adsorption on (101) and (001) surface orientations of SnO2, unlike (110) and (100), where CO2 molecule forms and desorbs from the surfaces. After adsorption on (101) and (001) surface orientations, CO molecule bound to the surfaces and transfer electrons to it. The charge transfer was calculated using Bader charge analysis, which showed the amount of charge transferred to the (101) and (001) surfaces is larger than to the (110) and (100) surfaces. In the case of (001) surface orientation, we considered half and full surface coverage. It was shown that during full surface coverage only one molecule can be adsorbed and transfer 2e charge. Electronic density of states (eDoS) calculation was done to explain the increase of surface conductance.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>газовые сенсоры</kwd><kwd>теория функционала плотности (ТФП)</kwd><kwd>угарный газ (CO)</kwd><kwd>адсорбция</kwd><kwd>механизм Марса-ван Кревелена</kwd><kwd>электронная плотность состояний</kwd></kwd-group><kwd-group xml:lang="en"><kwd>gas sensors</kwd><kwd>density functional theory (DFT)</kwd><kwd>сarbon monoxide (CO)</kwd><kwd>adsorption</kwd><kwd>Mars-van Krevelen mechanism (MvK)</kwd><kwd>electronic density of states (eDoS)</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">NATO project Science for Peace; Prof. Artem Oganov; Davit Ghazaryan and Dr. Alexander Kvashnin</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Aroutiounian V. 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