alternativeАльтернативная энергетика и экология (ISJAEE)Alternative Energy and Ecology (ISJAEE)1608-8298Международный издательский дом научной периодики "Спейс10.15518/isjaee.2019.34-36.041-072alternative-1847Research ArticleV. КОНСТРУКЦИОННЫЕ МАТЕРИАЛЫ. 13. НаноструктурыV. КОНСТРУКЦИОННЫЕ МАТЕРИАЛЫ. 13. НаноструктурыФизические основы увеличения термоэлектрической добротности наноструктурированных материаловPhysical Principles of Increasing Thermoelectric Figure of Merit in Nanostructured MaterialsГридневС. А.GridnevS. A.

Станислав Александрович Гриднев, доктор физико-математических наук, профессор, профессор кафедры физики твердого тела

д. 14, Московский просп., Воронеж, 394026

Stanislav Gridnev, D.Sc. in Physics and Mathematics, Professor at the Department of Solid State Physics

14 Moskovskii Ave., Voronezh, 394026

КалининЮ. Е.KalininYu. E.

Юрий Егорович Калинин, доктор физико-математических наук, профессор кафедры физики твердого тела

д. 14, Московский просп., Воронеж, 394026

Yurii Kalinin, D.Sc. in Physics and Mathematics, Professor at the Department of Solid State Physics

14 Moskovskii Ave., Voronezh, 394026

kalinin48@mail.ruМакагоновВ. А.MakagonovV. A.

Владимир Анатольевич Макагонов, кандидат физико-математических наук, младший научный сотрудник кафедры физики твердого тела

д. 14, Московский просп., Воронеж, 394026

Vladimir Makagonov, Ph.D. in Physics and Mathematics, Junior Researcher at the Department of Solid State Physics

14 Moskovskii Ave., Voronezh, 394026

Воронежский государственный технический университетРоссияVoronezh State Technical UniversityRussian Federation201904012020034-364172Copyright © Международный издательский дом научной периодики "Спейс, 20202020Международный издательский дом научной периодики "СпейсМеждународный издательский дом научной периодики "Спейсhttps://www.isjaee.com/jour/about/submissions#copyrightNoticehttps://www.isjaee.com/jour/article/view/1847

Рассмотрены основные физические принципы повышения термоэлектрической добротности наноструктурированных материалов: тонких пленок, сверхрешеток, нитевидных кристаллов, наноразмерных структур, квантовых ям, квантовых проволок. Последовательно изучены физические основы оптимизации таких важных параметров термоэлектических материалов, как термоЭДС, удельное электрическое сопротивление, а также теплопроводность. Показано, что решеточная теплопроводность в наноматериале может быть снижена за счет рассеяния фононов на границах раздела, или эффекта фононного конфайнмента. Проведен анализ влияния зернограничного теплового сопротивления Капицы в зависимости от типа границ раздела: когерентные (возможно присутствие упругих деформаций), полукогерентные (дислокации несоответствия окружены упругими деформациями) и некогерентные (взаимодействие между фазами минимально), формы и размера включений. ТермоЭДС в низкоразмерных структурах может быть увеличена при изменении вида плотности состояний вблизи уровня Ферми или благодаря эффекту энергетической фильтрации носителей заряда. В рамках увеличения термоЭДС рассмотрен квантовый переход «полуметалл − полупроводник» в наноструктурах на основе висмута и углерода. Эффект модуляционного легирования позволяет достигать больших значений подвижности носителей заряда при их очень высокой концентрации, что в работе было продемонстрировано на примере сверхрешеток квантовых точек на основе кремния и германия, а также двухфазных композитов. Большое внимание уделено анализу существующих в литературе экспериментальных результатов, которые подтверждают теоретические выводы о перспективности создания высокоэффективных термоэлектрических наноматериалов. Кратко рассмотрены основные подходы получения наноструктур с требуемым размером и распределением наночастиц.

The paper reviews the basic physical principles of improving the thermoelectric quality factor in nanostructured materials such as thin films, superlattices, whiskers, nanoscale structures, quantum wells, quantum wires. The physical fundamentals of optimizing such important parameters of thermoelectric materials as thermoelectric power, electrical resistivity, and thermal conductivity. We have conducted the analysis of the effect of Kapitsa grain-boundary thermal resistance, depending on the type of interfaces: coherent (the presence of elastic strains is possible), semicoherent (misfit dislocations are surrounded by elastic strains), and incoherent (the interaction between phases is minimal), shape and size of inclusions. The thermoelectric power in low-dimensional structures can be increased by changing the form of the density of states near the Fermi level or due to the effect of energy filtering of charge carriers. As part of the increase in the thermopower, the semimetal−semiconductor quantum transition in bismuth and carbonbased nanostructures is considered. The modulation doping of nanostructures allows one to achieve large values of the mobility of charge carriers at their very high concentration, which is demonstrated in the work on the example of superlattices of quantum dots based on silicon and germanium, as well as two-phase composites. Much attention is paid to the analysis of the experimental results, available in literature, which confirm the theoretical conclusions about the possibility of creating highly effective thermoelectric nanomaterials. The main approaches to obtaining nanostructures with the required size and distribution of nanoparticles are briefly considered.

термоэлектрическая добротностькоэффициент Зеебекананоструктурыплотность состоянийэнергетическая фильтрациямодуляционное легированиепереход «полуметалл − полупроводник»thermoelectric figure of meritSeebeck coefficientnanostructuresdensity of statesenergy filtrationmodulation dopingsemimetal−semiconductor transitionРабота выполнена при финансовой поддержке Министерства образования и науки Российской Федерации в рамках постановления Правительства Российской Федерации от 9 апреля 2010 г. № 218 (Договор № 03.G25.31.0246)This work was financially supported by the Ministry of Education and Science of the Russian Federation according Decree of the Government of the Russian Federation, April 9, 2010 № 218 (Agreement № 03.G25.31.0246)ReferencesSnyder, G.J. Complex thermoelectric materials / G.J. Snyder, E.S. Toberer // Nature materials. – 2008. – Vol. 7. – P. 105–114.Snyder G.J., Toberer E.S. Complex thermoelectric materials. Nature materials, 2008;(7):105–114.Fitriani, F. 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The authors declare that there are no conflicts of interest present.