STUDY OF THE PHOTOVOLTAIC CHARACTERISTICS  OF MULTI-JUNCTION SOLAR CELLS FABRICATED BY ONE-STEP AND TWO-STEP SEPARATION ETCHING

E. V. Kontrosh; A. V. Malevskaya; N. M. Lebedeva; E. A. Grebenshchikova; L. V. Kontrosh; N. D. Il`inskaya; V. S. Kalinovsky

doi:10.15518/isjaee.2015.19.009

STUDY OF THE PHOTOVOLTAIC CHARACTERISTICS OF MULTI-JUNCTION SOLAR CELLS FABRICATED BY ONE-STEP AND TWO-STEP SEPARATION ETCHING

E. V. Kontrosh, A. V. Malevskaya, N. M. Lebedeva, E. A. Grebenshchikova, L. V. Kontrosh, N. D. Il`inskaya, V. S. Kalinovsky

https://doi.org/10.15518/isjaee.2015.19.009

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Abstract

The present work investigates the influence of the post-growth technology on solar cell photovoltaic characteristics. Moreover, it researches the various methods of chemical wet etching of multi-junction GaInP/GaAs/Ge solar cell mesa structures. The paper pays attention to the analysis of the initial dark current-voltage characteristics and the influence of the post-growth technology on the solar cell efficiency. It suggests the method of one-step separation etching of the mesa structure providing its smooth side surface, a reliable passivation, good stability of characteristics and high conversion efficiency of concentrated solar radiation. As a result of the research, it has been established that application of the proposed method for forming mesa multi-junction solar cells allows reducing the surface leakage current, improving the quality of passivation mesa side surface of a chip and, consequently, increasing the yield of multijunction solar cells up to 90–95% with an efficiency greater than 35% at sunlight concentration C = 10...100. The technology of one-step separation etching reduces the number of operations, the manufacturing cost of the chips and improves the reliability of the solar cell operation.

Keywords

multi-junction solar cells, solar energy, chemical wet etching

About the Authors

E. V. Kontrosh

Ioffe Physical-Technical Institute
Russian Federation

MA, postgraduate, Ioffe Institute

A. V. Malevskaya

Ioffe Physical-Technical Institute
Russian Federation
Jr. reseacher, Ioffe Institute

N. M. Lebedeva

Ioffe Physical-Technical Institute
Russian Federation
postgraduate, Ioffe Institute

E. A. Grebenshchikova

Ioffe Physical-Technical Institute
Russian Federation
PhD (physics and mathematics), senior researcher of Ioffe Institute

L. V. Kontrosh

Electrotechnical University “LETI”
Russian Federation
MA, ecologist of Electrotechnical University “LETI”

N. D. Il`inskaya

Ioffe Physical-Technical Institute
Russian Federation
PhD (physics and mathematics), senior researcher of Ioffe Institute

V. S. Kalinovsky

Ioffe Physical-Technical Institute
Russian Federation
senior researcher of Ioffe Institute

References

1. Dimroth F., Grave M., Beutel P., Fiedeler U., Karcher C., Tibbits T.N.D., Oliva E., Siefer G., Schachtner M., Wekkeli A., Bett A.W., Krause R., Piccin M., Blanc N., Drazek C., Guiot E., Ghy-selen B., Salvetat T., Tauzin A., Signamarcheix T., Dobrich A., Hannappel T. and Schwarzburg K. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency. Progress in Photovoltaics: Re-search and Applications, 2014, vol. 22, iss. 3, pp. 277–282 (in Eng.).

2. Andreev V.M., Evstropov V.V., Kalinovsky V.S., Lantratov V.M., Hvostikov V.P. Tokoprohoždenie i potencialʹnaâ èffektivnostʹ (KPD) solnečnyh èlementov na osnove p-n-perehodov iz GaAs i GaSb. FTP, 2009, vol. 43, iss. 5, p. 671 (in Russ.).

3. Kalinovsky V.S., Evstropov V.V. and et al. On de-pendence of the multijunction In-GaP/GaAs/Ge, In-GaP/GaAs solar cell efficiency on the sunlight concentra-tion. Proc. 24th European Photovoltaic Solar Energy Conference, Humburg, Gemany, 2009, p. 733 (in Eng.).

4. Andreev V.M., Kalinovsky V.S. and et al. // Proc. 25th European Photovoltaic Solar Energy Conference and 5th World Conference on Photovoltaic Energy Con-version, Valencia, Spain, 2010, p. 979 (in Eng.).

5. Andreev V.M., Ilʹinskaya N.D., Kalyuzhny N.A., Lantratov V.M., Malevskaya A.V., Mintairov S.A. Sposob izgotovleniâ čipov fotoèlektričeskih preobra-zovatelej. Patent 2391744 Russian Federation MPK8: H01L 31/18 (30.12.2008) (in Russ.).

6. Andreev V.M., Grebenshchikova E.A., Zadiranov Yu.M., Ilʹinskaya N.D., Kalinovsky V.S., Malevskaya A.V., Usikova A.A. Sposob izgotovleniâ čipov nanoget-erostruktury i travitelʹ. Patent 2485628 Russian Federation MPK2011: H01L 31/18 (20.06.2013) (in Russ.).

Review

For citations:

Kontrosh E.V., Malevskaya A.V., Lebedeva N.M., Grebenshchikova E.A., Kontrosh L.V., Il`inskaya N.D., Kalinovsky V.S. STUDY OF THE PHOTOVOLTAIC CHARACTERISTICS OF MULTI-JUNCTION SOLAR CELLS FABRICATED BY ONE-STEP AND TWO-STEP SEPARATION ETCHING. Alternative Energy and Ecology (ISJAEE). 2015;(19):70-75. (In Russ.) https://doi.org/10.15518/isjaee.2015.19.009

ISSN 1608-8298 (Print)

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Alternative Energy and Ecology (ISJAEE)