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STUDY OF CRYSTALLINITY PARAMETER DISTRIBUTION FOR mc-Si FILMS, OBTAINED BY PECVD, BY USING RAMAN SPECTROSCOPY

https://doi.org/10.15518/isjaee.2015.19.016

Abstract

The article investigates the samples, obtained by Plasma Enhanced Chemical Vapour Deposition (PECVD) on the KAI-1-1200 installation for forming the photoactive layers of amorphous and microcrystalline silicon. Optimal average crystallinity parameter for mc-Si film is 52%.The authors of this article made a map of the crystallinity parameter distribution of the film surface for mc-Si film and took the measurements of Raman spectra at different points located evenly around the perimeter of the film. An important factor in the studying films is their uniform deposition on the substrate. As the KAI-1-1200 installation has several features which prevent the uniform deposition of films this distribution map helps to take account of these factors in order to eliminate them or find the optimal parameters of growth that will compensate for the uneven distribution of the film.

 

About the Authors

V. L. Koshevoi
National Mineral Resource University “Mining University”
Russian Federation
postgraduate, engineer, National Mineral Resources University (MINING University)


A. O. Belorus
Saint Petersburg Electrotechnical University “LETI”
Russian Federation
postgraduate, engineer, Saint Petersburg Electrotechnical University “LETI”


V. S. Levitskiy
Saint Petersburg Electrotechnical University “LETI” TF TE Ioffe R&D Center
Russian Federation
postgraduate, engineer, Saint Petersburg Electrotechnical University “LETI”


References

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Review

For citations:


Koshevoi V.L., Belorus A.O., Levitskiy V.S. STUDY OF CRYSTALLINITY PARAMETER DISTRIBUTION FOR mc-Si FILMS, OBTAINED BY PECVD, BY USING RAMAN SPECTROSCOPY. Alternative Energy and Ecology (ISJAEE). 2015;(19):118-123. (In Russ.) https://doi.org/10.15518/isjaee.2015.19.016

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ISSN 1608-8298 (Print)