CALCULATION OF OPTIMUM PARAMETERS AND LIMIT CHARACTERISTICS OF CASCADE SILICON PHOTOCONVERTERS

Work is devoted to an assessment of optimum parameters of cascade silicon photo-electric converters. Unlike matrix solar elements the direction of a light stream is provided in cascade option perpendicular to the plane of several transitions created consistently on one basic plate of silicon. Follows from the analysis of constructive registration of the cascade photoconverter that the optimum mode of its work will be only when the solar light stream passing through basic layers of the semiconductor generates in them equal number of electron-hole couples in unit of time. This requirement can be realized by the corresponding calculation of extents of basic layers of the semiconductor. Thickness of high-alloyed layers n+ and p+ between basic layers have to be minimum and not exceed 0.5 microns everyone.

Especially for determination of optimum values of basic layers in cascade silicon photoconverters settlement dependence of density of short circuit of silicon photo cells on semiconductor layer thickness at standard sunlight of AM-1.5 has importance. Calculations of optimum values of basic layers of cascade photoconverters are presented in work for two, three, four and five multitransitional structures. The analysis of parameters of multitransitional photoconverters allows to draw a conclusion that the considered semiconductor structures can be successfully used in devices of direct electrolysis of water on hydrogen and oxygen as the potential of such cascade photo cell lit with a sunlight considerably exceeds the potential of communication of atoms of hydrogen and oxygen in a water molecule. The same circumstance will help to take from sea water rich with minerals and other chemical elements which are of interest to certain industries and agriculture.

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