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Optical properties of thin films а-Si1-xGex:H (x = 0-1) for electronic devices
https://doi.org/10.15518/isjaee.2024.08.018-029
Abstract
Possibilities of plasma chemical deposition of а-Si1-xGex:H (x = 0-1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in p-i-n structures of solar cell. The optical properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in а-Si:H and а-Ge:H films is measured. The а-Si:H and а-Si0,88 Ge1,2:H films were used to fabricate three-layer solar with an element area of 1,3 sm2 and an efficiency (ζ) of 9,5%.
About the Authors
B. A. Najafov
Institute of Radiation Problems of the Ministry of Science and Education
Azerbaijan
Azerbaijan
Bakhtiyar A. Najafov - Doctor of Physical Sciences, Chief Researcher, Laboratory of Radiation Physics of Semiconductors.
Az 1143, Baku, st. B. Vahabzade, 9
Sh. N. Nasirov
Azerbaijan state oil and industrial university (ASOIU)
Azerbaijan
Azerbaijan
Shukur N. Nasirov - Ph.D. those. Sciences, Associate Professor, Head of the Department of «Energy Production Technology» at ASOIU.
Az 1010, Baku, Azadlig Ave., 16/21
Sh. N. Nasirov
Baku Engineering University
Azerbaijan
Azerbaijan
Shamsi N. Nasirov - Ph.D. those. Sciences, Associate Professor, Department of Automation, Telecommunications and Energy at BEU.
Az 0102. Khirdalan, st. Hasan Aliyev, 120
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Review
For citations:
Najafov B.A., Nasirov Sh.N., Nasirov Sh.N. Optical properties of thin films а-Si1-xGex:H (x = 0-1) for electronic devices. Alternative Energy and Ecology (ISJAEE). 2024;(8):18-29. (In Russ.) https://doi.org/10.15518/isjaee.2024.08.018-029
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