Buy (120 RUB)
Generate QR code
Open Access
Subscription or Fee Access
Photoelectric and optical properties of GexSi1-x binary compounds silicon
https://doi.org/10.15518/isjaee.2023.12.012-018
Abstract
The use of alternative and renewable sources of energy supply in energy supply around the world is attracting great and practical interest. The growing interest in them is caused by environmental considerations, on the one hand, and the limited nature of traditional hydrocarbon energy sources, on the other. A special place among alternative and renewable energy sources is occupied by photoelectric solar energy converters, the study of physics, which has become a separate scientific direction of photovoltaics. The development and creation of photocells based on silicon by binary compounds of germanium atoms GexSi1 – x in volume is also of particular interest to scientists and specialists. Since the production of silicon with binary compounds of silicon-germanium with certain electrical parameters and structure allows you to significantly expand the spectral region of the sensitivity of photodetectors and the efficiency of photocells based on such materials.
About the Authors
N. F. Zikrillaev
Tashkent State technical university
Uzbekistan
Uzbekistan
Zikrillaev Nurulla Fatxullaevich, Doctor of Physical and Mathematical Sciences, Professor
100095 Tashkent, st. University 2
G. A. Kushiev
Tashkent State technical university
Uzbekistan
Uzbekistan
Kushiev Giyosiddin, PhD student
100095 Tashkent, st. University 2
N. Norkulov
National University of Uzbekistan named after Mirzo Ulugbek (NUU)
Uzbekistan
Uzbekistan
Norkulov Nemat, Dotsent (PhD)
B. Abdurakhmanov
Tashkent State Technical University
Uzbekistan
Uzbekistan
Abdurakhmanov Bakhromjon Abdukakhkharovich, (PhD)
st. Universitetskaya 2, 100095 Tashkent
O. S. Nematov
Samarkand State University
Uzbekistan
Uzbekistan
Nematov Otabek, PhD student
st. University blv. 15, 140104 Samarkand
References
1. Bakhadyrkhanov M.K., Iliev KH.M., Tachilin S.A., Toshboev T. "Vliyanie dopolnitel'nogo legirovaniya primesyami s glubokimi urovnyami na parametry kremnievykh solnechnykh ehlementov i ikh degradatsiyu", zhurnal Geliotekhnika, 1998 g., № 2, str. 84-89.
2. Mirsagatov R.M. Metasbil'nost' tsentrov margantsa v tverdykh rastvorakh kremnii-germanii. FTP.1992, v.3, s. 427.
3. Bahadyrkhanov M.K., Isamov S.B., Zikrillaev N.F., Tursunov M.O. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms. Semiconductors, 2021, Vol. 55, № 6, pp. 542–545.
4. Bakhadyrkhanov M.K., Isamov S.B., Kenzhaev Z.T., Melebaev D., Zikrillayev Kh.F., Ikhtiyarova G.A. Silicon Photovoltaic Cells with Deep p–n Junction. Applied Solar Energy, 2020, Vol. 56, № 1, pp. 13-17.
5. Bakhadyrkhanov M.K., Abdurakhmonov B.A., Zikrillaev KH.F. O sostoyanii germaniya v kremnii usloviyakh nizkotemperaturnoi diffuzii // Tekhnolo-giya, oborudovanie i novye materialy, Pribory. 2018. № 5 (215) S. 39-43.6.
6. B'yub R. Fotoprovodimost' tverdykh tel. Moskva, 1962, s. 558.
7. Chirkovo E.G. Osobennosti spektra dlinnovolnovoi primesei fotoprovodimosti v kompensirovannom Ge. FTP. 1995, S. 1576.
8. Zikrillaev N.F., Koveshnikov S.V., Isamov S.B., Abdurahmonov B.A., Kushiev G.A., Spectral Dependence of the Photoconductivity of GexSi1 – x Type Graded-Gap Structures Obtained by Diffusion Technology. Semiconductors, 2022, Vol. 56, No. 1, pp. 29-31.
9. T.M. Burbaev, T.N. Zavaritskaya, V.A. Kurbatov, N.N. Mel'nik, A.A. Tsvetkov, K.S. Zhuravlev, A.I Nikiforov. Opticheskie svoistva monosloev germaniya na kremnii. FTP. 2001, № 8, S. 979-985.
10. Terakawa Akira, Isomura Masao, Tsuda Shinya. Effect of optimal gap on the stability of α-SiGe solar cells. // 16th Int. Conf. Amorph. Semicond. – Si, and Technol., Kobe, Sept. 4-8, 1995: /CAS 16Pt 2.
11. Parkhomenko YU.N., Belogorokhov A.I., Gerasimenko N.N., Irzhak A.V., Lisachenko M.G. Svoistva samoorganizovannykh SiGe-nanostruktur, poluchennykh metodom ionnoi implantatsii. Fizika i tekhnika poluprovodnikov, 2004, T.38, V.5, S. 593-597.
12. S. Abedrabbo, D.E. Arafah, O. Gokce, L.S. Wielunski, M. Gharaibeh, O. Celik and N.M. Ravindra. Ion Beam Mixing for Processing of Nanostructure Materials. Journal of ELECTRONIC MATERIALS, Vol. 35, № 5, 2006.
13. Abdurakhmonov B.A., Zikrillaev N.F., Isamov S.B., Sodikov U.KH., Saitov EH.B., Saparniyazova Z.M., Mirkomilova M. Kremnii s klasterami primesnykh atomov – kak novyi klass materialov dlya fotoehnergetiki. Respublikanskaya nauchno-tekhnicheskaya konferentsiya «Aktual'nye problemy ispol'zovaniya al'ternativnykh istochnikov ehnergiI». Karshi, 28-29 aprelya 2014 g., C. 98-99.
14. Saidov A.S., Razzokov A.S. Growth and Morphological Study of Graded-Gap Si–Si1–xGex–GaAs Structures. Crystallography Reportsthis, 2022, 67(2), str. 301–305.
15. Ledentsov N.N., Ustinov V.M., Shchukin V.A., Kop'ev P.S., Alferov ZH.I., Bimberg D. Geterostruktury s kvantovymi tochkami.
Review
For citations:
Zikrillaev N.F., Kushiev G.A., Norkulov N., Abdurakhmanov B., Nematov O.S. Photoelectric and optical properties of GexSi1-x binary compounds silicon. Alternative Energy and Ecology (ISJAEE). 2023;(12):12-18. (In Russ.) https://doi.org/10.15518/isjaee.2023.12.012-018
Views:
103
Email this article 