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THE PHOTOLUMINESCENCE STUDIES OF POROUS SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING
https://doi.org/10.15518/isjaee.2015.23.016
Abstract
The photoluminescence spectra of porous silicon layers obtained by photoelectrochemical etching using a He-Ne laser are discussed. Por-Si is promising material for improving the efficiency of solar cells.
About the Authors
A. O. Belorus
Saint Petersburg Electrotechnical University “LETI”
5 Professor Popov str., St. Petersburg, 197376 Russia
Russian Federation
Russian Federation
postgraduate, engineer
V. L. Koshevoi
National Mineral Resources University (Mining University)
2, 21st Line, St. Petersburg, 199106 Russia
Russian Federation
postgraduate, engineer
Russian Federation
postgraduate, engineer
Yu. M. Spivak
Saint Petersburg Electrotechnical University “LETI”
5 Professor Popov str., St. Petersburg, 197376 Russia
Russian Federation
Russian Federation
Ph.D. (physics and mathematics), docent
V. S. Levitsky
NTC thin-film technology in power engineering at A.F. Ioffe Physicotechnical Institute
28 Politekhnicheskaya str., St. Petersburg, 194064 Russia
Russian Federation
Russian Federation
postgraduate, engineer,
V. A. Moshnikov
Saint Petersburg Electrotechnical University “LETI”
5 Professor Popov str., St. Petersburg, 197376 Russia
Russian Federation
Russian Federation
DSc (physics and mathematics), Professor
References
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Review
For citations:
Belorus A.O., Koshevoi V.L., Spivak Yu.M., Levitsky V.S., Moshnikov V.A. THE PHOTOLUMINESCENCE STUDIES OF POROUS SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING. Alternative Energy and Ecology (ISJAEE). 2015;(23):126-132. (In Russ.) https://doi.org/10.15518/isjaee.2015.23.016
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