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THE EFFECT OF PRESSURE ON THE MAGNETO-ABSORPTION IN NARROW-GAP SEMICONDUCTORS

https://doi.org/10.15518/isjaee.2017.07-09.112-120

Abstract

The paper obtains the dependence of the oscillations in the joint density of states of hydrostatic pressure in semiconductors with non-parabolic dispersion law and compares the oscillation of the joint density of states for the photon energy at different pressures in non-parabolic and parabolic zones. The method is applied to the research of the magnetic absorption in narrow-gap semiconductors with non-parabolic dispersion law. A new method for studying the influence of high pressures on the Landau levels in a semiconductor with a nonparabolic dispersion law is developed. The experimental results were interpreted using a joint density of states in a strong magnetic field. The theoretical results are compared with experimental results obtained for InN.

 

About the Authors

G. Gulyamov
Namangan Engineering Pedagogical Institute
Uzbekistan
D.Sc. (physics and mathematics), Professor of Physics Department


U. I. Erkaboev
Physico-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Ph.D. (physics and mathematics), Senior Researcher of Research Laboratory of Physics of Semiconductors and Solid State Theory


P. J. Baymatov
Namangan State University
Uzbekistan
Ph.D. (physics and mathematics), Assistant Professor of Physics Department


A. G. Gulyamov
Physico-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Ph.D. (physics and mathematics), Senior Researcher of Research Laboratory of Physics of Semiconductors and Solid State Theory


References

1. Anselm A.I. Vvedenie v teoriû poluprovodnikov. Moscow: Nauka, 1978 (in Russ.).

2. Gulyamov G., Erkaboev U.I., Baimatov P.Zh. Modelirovanie zavisimosti ènergii pogloŝaemogo fotona ot magnitnogo polâ v poluprovodnikah. International Scientific Journal for Alternative Energy and Ecology (ISJAEE). 2016;(19–20):130–138 (in Russ.).

3. Gulyamov G., Erkaboev U.I., Baymatov P.J. Determination of the density of energy states in a quantizing magnetic field for model Kane. Advances in condensed matter physics. 2016;(2016):Article ID 5434717. http://dx.doi.org/10.1155/2016/5434717 (Hindawi) (in Eng.).

4. Gulyamov G., Karimov I.N., Sharibaev N.Yu., Erkaboev U.I. Opredelenie plotnosti poverhnostnyh sostoânij na granice razdela poluprovodnik dièlektrik v strukturah Al-SiO2-Si i Al-SiO2-n-Si pri nizkoj temperature. Uzbekskij fizičeskij Žurnal. 2010;(12/3):143–146 (in Russ.).

5. Gulyamov G., Sharibaev N.Yu., Erkaboev U.I. Teplovoe uširenie plotnosti sostoânij i temperaturnaâ zavisimost’ širiny zapreŝennoj zony Ge. Fizičeskaâ inženeriâ poverhnosti. 2012:(10/4);366–370 (in Russ.).

6. Gulyamov G., Sharibaev N. Opredelenie diskretnogo spektra plotnosti poverhnostnyh sostoânij MOP struktur Al-SiO2-Si oblučennyh nejtronami. Poverhnost’. Rentgenovskie, sinhrotronnye i nejtronnye issledovanie. 2012;(9):1–5 (in Russ.).

7. Gulyamov G., Sharibaev N.Yu. Opredelenie plotnosti poverhnostnyh sostoânij granicy razdela poluprovodnik-dièlektrik v MDP structure. Fizika i tehnika poluprovodnikov. 2011;(45/2):178–182 (in Russ.).

8. Mott N., Devis E. Èlektronnye processy v nekristalličeskih veŝestvah. Moscow: Mir Publ., 1982, 368 p. (in Russ.).

9. Lifshits I.M., Kosevich A.M. K teorii magnitnoj vospriimčivosti metallov pri nizkih temperaturah. ŽÈTF. 1955;(29/6):730–742 (in Russ.).

10. Lifshits I.M., Gredeskul S.A., Pastur L.A. Vvedenie v teoriû neuporâdočennyh sistem. Moscow: Nauka Publ., 1982 (in Russ.).

11. Landau L.D., Lifshits E.M. Statističeskaâ fizika. Moscow: Nauka Publ., 1976 (in Russ.).

12. Gulyamov G., Erkaboev U. I., Sharibaev N.Yu. The temperature dependence of the band gap Si. Physical surface engineering. 2013;(11/3):289–292 (in Eng.).

13. Gulyamov G., Erkaboev U.I., Sharibaev N.Yu. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field. Semiconductor. 2014;(48/10):1323–1328 (in Eng.).

14. Gulyamov G., Erkaboev U.I., Sharibaev N.Yu. Simulation of the temperature dependence of the density of states in a strong magnetic field. Joural of Modern Physics. 2014;(5/8):680–685 (in Eng.).

15. Ibánez J., Segura A., Garcia- Domene B., Oliva R., Manjon F.J., Yamaguchi T., Nanishi Y., Artus L. High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN. Phys. Rev. B. 2012;(86):035210 (in Eng.).

16. Ruiz-Fuertes J., Errandonea D., Manjon F.J., Martinez-Garcia D., Segura A., Ursaki V.V., Tiginyanu I.M. High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, MnIn2S4 thiospinels. Journ. of Appl. Phys. 2008;(103)063710 (in Eng.).

17. Cidil’kovskiy I.M. Èlektrony i dyrki v poluprovodnikah. Moscow: Nauka Publ., 1972 (in Russ.).

18. Dubickiy I.S., Yafyasov A.M. Èffekt polâ v tonkih plenkah poluprovodnikov s kejnovskim zakonom dispersii nositelej zarâda. FTP. 2014;(48/3):327–333 (in Russ.).

19. Pavlov N.V., Zegrya G.G. Optičeskie svojstva geterostruktur s glubokimi kvantovymi âmami AlSb/InAs0.84Sb0.16/AlSb. FTP. 2014;(48/9):1217–1227 (in Russ.).

20. Pavlov N.V., Zegrya G.G. Izlučatel’naâ rekombinaciâ gorâčih nositelej v uzkozonnyh poluprovodnikah. FTP. 2012;(46/1):32–37(in Russ.).

21. Polyakova A.L. Deformation of semiconductors and semiconductor devices. Moscow: Energy Publ. (in Eng.).

22. Bir G.L., Pikus G.E. Symmetry and Deformation Effects in Semiconductors. Moscow: Nauka Publ., 1972 (in Eng.).

23. Pässler R. Semi-empirical descriptions of temperature dependences of band gaps in semiconductors. Phys. Stat. Sol.(B). 2003;(236/3):710–728 (in Eng.). doi:10.1002/pssb.200301752

24. Pässler R. Parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semi-conductors // Phys. Stat. Sol.(B). 1999;(216/2):975 (in Eng.).

25. Baranskiy P.I., Klochkov V.P., Potykevich I.V. Poluprovodnikovaâ èlektronika. Kiev: Naukova dumka Publ., 1975, 704 p. (in Russ.).


Review

For citations:


Gulyamov G., Erkaboev U.I., Baymatov P.J., Gulyamov A.G. THE EFFECT OF PRESSURE ON THE MAGNETO-ABSORPTION IN NARROW-GAP SEMICONDUCTORS. Alternative Energy and Ecology (ISJAEE). 2017;(7-9):112-120. (In Russ.) https://doi.org/10.15518/isjaee.2017.07-09.112-120

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ISSN 1608-8298 (Print)