The Features of Radiation Absorption in Silicon with Surfacial Structure and Its Influence on Photoelectric Converters Properties

The paper researches the influence of front surfaces texturing and a thickness of basic polycrystalline and multicrystalline silicon on the main photoelectric parameters of photoelectric converters. We have compared the virtual and experimental results of dependence of photoelectric parameters on a thickness of base.

In experiments, we have employed the planar diffuse technology. As a base material, the silicon single-layered epitaxial layers with resistivity of 1÷3 Om·sm which have been grown up on substrates from silicon with resistivity of 0.001 Om·sm are used. Formation emitter areas has been carried out by high-temperature diffusion. The concentration of an alloying impurity (phosphorus) in an emitter layer is 1019 ÷ 1021 sm-3 .

We have made calculations of optical characteristics of a front surface the Solar cell (SC) and their voltagecurrent characteristics at illumination by a sunlight simulator and merge together the calculations results of the basic photoelectric parameters of experimental and virtual SC depending on a base silicon thickness. The settlement analysis of influence of a thickness of base on a Silicon SC photocurrent with diffuse p-n-junction shows that if to use a way of front surface texturing, it is possible to receive high values of a current at essentially smaller values of a thickness. Calculations of some physical parameters of radiation absorption in silicon are made, in particular, calculation of dependence of radiation absorption depth on its wave length. Settlement values of a factor of reflexing from a silicon surface approximately corresponds to the experimental data received for silicon SC. The results obtained are confirmed due to the peculiarities of changing the depth of absorption of solar radiation in the silicon volume after interaction with a surface relief or texture.

It is represent expedient to consider results of the work as the certificate for working out of a method of the further decrease in a thickness of silicon base for creation of effective photoelectric converters of energy that has important prospect on the economic point of view.

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