Физические основы увеличения термоэлектрической добротности наноструктурированных материалов

Рассмотрены основные физические принципы повышения термоэлектрической добротности наноструктурированных материалов: тонких пленок, сверхрешеток, нитевидных кристаллов, наноразмерных структур, квантовых ям, квантовых проволок. Последовательно изучены физические основы оптимизации таких важных параметров термоэлектических материалов, как термоЭДС, удельное электрическое сопротивление, а также теплопроводность. Показано, что решеточная теплопроводность в наноматериале может быть снижена за счет рассеяния фононов на границах раздела, или эффекта фононного конфайнмента. Проведен анализ влияния зернограничного теплового сопротивления Капицы в зависимости от типа границ раздела: когерентные (возможно присутствие упругих деформаций), полукогерентные (дислокации несоответствия окружены упругими деформациями) и некогерентные (взаимодействие между фазами минимально), формы и размера включений. ТермоЭДС в низкоразмерных структурах может быть увеличена при изменении вида плотности состояний вблизи уровня Ферми или благодаря эффекту энергетической фильтрации носителей заряда. В рамках увеличения термоЭДС рассмотрен квантовый переход «полуметалл − полупроводник» в наноструктурах на основе висмута и углерода. Эффект модуляционного легирования позволяет достигать больших значений подвижности носителей заряда при их очень высокой концентрации, что в работе было продемонстрировано на примере сверхрешеток квантовых точек на основе кремния и германия, а также двухфазных композитов. Большое внимание уделено анализу существующих в литературе экспериментальных результатов, которые подтверждают теоретические выводы о перспективности создания высокоэффективных термоэлектрических наноматериалов. Кратко рассмотрены основные подходы получения наноструктур с требуемым размером и распределением наночастиц.

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