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Structural and photoelectric properties of the thin-film heterojunction N-ZNO/P-SI obtained by the sol-gel method
https://doi.org/10.15518/isjaee.2020.09.012
Abstract
Thin metal oxide layers of ZnO were obtained on a substrate of single - crystal silicon of p-type conductivity with a crystallographic orientation (100), by spray pyrolysis, and the optimal technological modes of the sol-gel method for obtaining metal oxide films with the most perfect crystal structure were determined. The results of X-ray studies showed that the obtained ZnO films on silicon have a hexagonal syngony and a wurtzite structure with parameters a = 0.3265 nm and c = 0.5212 nm, with block sizes of 67 nm. It is shown that ZnO nanocrystals are formed on the surface of the films, with an average characteristic size of LZnO ≈ 84 nm and having diffraction indices – (102)ZnO with d/n = 0.1911 nm at (2□= 147,63°), (110)ZnO with d/n = 0.1630 nm at (2□= 56.67°) and (103)ZnO with d/n = 0.1481 nm at (2□= 62.93°), respectively. It is found that the photoluminescence spectrum of the n - ZnO/p - Si heterostructure has a wide band covering almost the entire visible radiation range with a maximum at λmax = 377 nm. This indicates that these conditions are optimal for growing a high-quality ZnO layer on Si with virtually no defects in the visible radiation region. This indicates that these conditions are optimal for growing a high-quality ZnO layer on Si with virtually no defects in the visible radiation region. The operational parameters of a device based on such metal oxides are promising for high-performance and low-cost commercial applications in light radiation detectors in the ultraviolet region. It is determined that n - ZnO metal oxide layers and heterostructures based on them can also be used in devices for converting mechanical deformation energy into electrical energy, electrical energy into light energy, and in solar energy converters into electrical energy. These materials are environmentally friendly, affordable and low-cost. It is established that the synthesis of new metal oxide materials and the development of various energy converters based on them are of high scientific and practical importance.
About the Authors
S. Z. Zaynobodinov
Andijan State University named after Z.M. Babur
Uzbekistan
Uzbekistan
doctor of science in physics and mathematics (1988), professor (1988), Chair of Physics, Academician of the Academy of Sciences of the Republic of Uzbekistan
170100, Andijan city, University street, h.129
Sh. Kh. Yulchiev
Andijan State University named after Z.M. Babur
Uzbekistan
Uzbekistan
doctor of philosophy in physics and mathematics, assistant professor Chair of Physics
170100, Andijan city, University street, h.129
A. Y. Boboev
Andijan State University named after Z.M. Babur
Uzbekistan
Uzbekistan
doctor of philosophy in physics and mathematics, assistant professor Chair of Physics
170100, Andijan city, University street, h.129
Phone: +998(90) 122-20-50, +9989(74) 225-61-30
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Review
For citations:
Zaynobodinov S.Z., Yulchiev Sh.Kh., Boboev A.Y. Structural and photoelectric properties of the thin-film heterojunction N-ZNO/P-SI obtained by the sol-gel method. Alternative Energy and Ecology (ISJAEE). 2020;(25-27):131-137. (In Russ.) https://doi.org/10.15518/isjaee.2020.09.012
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