Photoelectric properties of thin films ZnO based on silicon

The synthesis of a ZnO metal oxide film on the surface of KDB-20 silicon was carried out. It was determined that the crystallographic direction of the used silicon has the (100) orientation. The optimal conditions for obtaining thin ZnO films have been determined by the method of spray pyrolysis of the sol-gel technology. It was found that ZnO metal oxide films have a hexagonal system and a wurtzite crystal structure with the parameters a = 0,4989 nm and c = 0,8342 nm, with the nanocrystallite size of 67 nm. Investigation of the current-voltage characteristics (CVC) of n-ZnO/p-Si heterostructures at illumination E = 0 Lx and E = 1000 Lx and it was determined that the forward branch of the I-V characteristic has an exponential interval of current versus voltage. The effect of the concentration of deep impurities on the exponential section of the current-voltage characteristic has been studied. The results obtained are interpreted within the framework of the theory of the effect of injection depletion of carriers of the p-n junction. The photoluminescence spectrum of the n-ZnO/p-Si heterojunction has a maximum at λ_max = 377 nm and covers a wide band in the optical range. This makes it possible to determine the most optimal regime for growing the ordered structure of the ZnO film on the silicon surface, which ensures growth with practically no defect structure. Experimentally synthesized heterostructures can be used in solar energy and optoelectronics as photodetectors. New possibilities of using the n-ZnO metal oxide film in photovoltaic converters are indicated. The technology for producing films is environmentally friendly, affordable and economically viable, and seem promising for their application in the detection of visible and ultraviolet light.

1. . Meytin M. Photovoltaics: Materials, Technologies, Prospects // Electronics: Science, Technology, Business, 2000, No. 6, 40-46 p.

2. . Arvind Shah. Thin-film silicon solar cells // EPFL Press, 2010, 430 p.

3. . S. Zainabidinov, S. I. Rembeza, E. S. Rembeza and Sh. Kh. Yulchiev. Prospects for the Use of Metal-Oxide Semiconductors in Energy Converters // Applied Solar Energy, vol. 55, no. 1, pp. 5-7, 2019.

4. . Kushnir V. V. Optimization of the design of a film solar cell // Bulletin of SFedU. Technical sciences. Thematic issue. – 2011, No. 4 (117), p. 225-228.

5. . L. Luo, Y. Zhang, S. S. Mao, L. Lin. ZnO nanowires based on UV photodiodes, in: Proceedings of the 18th IEEE MEMS Conference, Miami, 2005, pp. 427-430.

6. . R. I. Badran [et al]. Fabrication of Heterojunction Diode Based on n-ZnO Nanowires/p-Si Substrate: Tempera-ture Dependent Transport Characteristics // Journal Nanosci Nanotechnol. – 2017 Jan; 17(1): 581-87.

7. . Periasamy C. Large-area and nanoscale n-ZnO/ p-Si heterojunction photodetectors / C. Periasamy and P. Chakrabarti // Journal of Vaccum Science and Technology. B. – 2011, vol. 29(5), pp. 051206.

8. . Sahu V. K. Studies on the electrical characteristics of n-ZnO/p-Si grown by pulsed laser deposition for UV photo detecting applications / V. K. Sahu [et al] // Physics Express. – 2013, vol. 3, 10 p.

9. . Sharma P. Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering, P. Sharma [et al] // Journal of Applied Physics. – 2003, vol. 93(7), pp. 3963-3970.

10. . Chang Y. M. Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition / Y. M. Chang [et al] // Nanotechology, 2010, vol. 21(38), pp. 385705.

11. . Yakuphanoglu F. ZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate / F. Yakuphanoglu [et al] // Material Science in Semiconductor Processing, 2010, vol. 13(3), pp. 137-140.

12. . Wang. P. Quality improvement of ZnO thin layers overgrown on Si (100) substrates at room temperature by nitridation pretreatment / P. Wang [et al] // AIP Advances. – 2012, vol. 2(2), pp. 022139.

13. . V. E. Polkovnikov, D. S. Permyakov, M. A. Belykh, Sh. Kh. Yulchiev, S. I. Rembeza. Use of pyrolytic metal oxide films for the manufacture of photovoltaic energy converters // Bulletin of the Voronezh State Technical University. – Voronezh. – 2019. – Vol. 15. – No. 5, pp. 72-77.

14. . Zainabidinov S. Z., Yulchiev Sh. Kh., Boboev A. Y. Structural and photoelectric properties of a thinfilm n-ZnO/p-Si heterojunction obtained by the sol-gel method // Alternative Energy and Ecology (ISJAEE). – 2020. – No. 25-27, pp. 347-349.

15. . Abduev A. Kh., Akhmedov A. K., Asvarov A. Sh., Muslimov A. E., Kanevsky V. M. Influence of nucleation conditions on the structure of zinc oxide layers // Crystallography. – 2020. – V. 65. – No. 3, pp. 489-490.

16. . Vikulin I. M., Stafeev V. I. Physics of semiconductor devices. – M.: Radio and Communications, 1990, p. 264.

17. . [ Volkovskiy Yu. A., Zhernova V. A., Folomeshkin M. S., Prosekov P. A., et al. Comparative X-ray diffractometry of the defect structure of epitaxial ZnO films grown by magnetron deposition on Al2O3 substrates with (0001) orientation in a non-uniform electric field // Crystallography. – 2023. – V. 68, No. 2, pp. 180-188.

18. . Saidov A. S., Leiderman A. Yu., Usmonov Sh. N., Amonov K. A. Injection depletion effect in p-Si-n-(Si2)1-x(ZnSe)x (0 ≤ x ≤ 0.01) heterostructure // Physics and Technology of Semiconductors. – 2018, Vol. 52, Issue. 9, pp. 1066-1070.

19. . Nikitin S. E., Nikolaev Yu. A., Polushina I. K., Rud V. Yu., Terukov E. I. Photoelectric phenomena in ZnO:Al-p-Si heterostructures // Physics and Technology of Semiconductors, 2003, Vol. 37, Issue. 11.

20. . Zainabidinov S. Z., Boboev A. Y., Leiderman A. Yu. Study of the current transport mechanism in n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures // Uzbek Physical Journal. – Tashkent, 2019. – No. 1, pp. 14-21.

21. . Adirovich E. I., Karageorgiy-Alkalaev P. M., Leiderman A. Yu.Double injection currents in semiconductors. – Moscow, Soviet Radio, 1978.

22. . Zebbar A. N., Kheyreddin A. Y., Mokeddem A. K., Hafdalla B. A., Kechuane M., Aida M. S. «Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic sputtering» // Scientific materials in semiconductor processing. – Volume 14. – 2011. – Issues 3-4. – P. 229-234.

23. . Zainabidinov S. Z., Daliev Kh. S., Yulchiev Sh. Kh., Boboev A. Y., Yunusaliev N. Yu. Structural features of ZnO metal oxide films based on silicon. Reports of the Academy of Sciences of the Republic of Uzbekistan. – Tashkent, 2020, No. 3, pp. 21-24.

24. . Sharenkova N. V., Kaminsky V. V., Petrov S. N. Sizes of X-ray coherent scattering regions in SmS thin films and their visualization // Journal of Technical Physics. – 2011. – Vol. 81, No. 9, pp. 144-146.

25. . Akhmedov A. K., Abduev A. Kh., Asvarov A. Sh., Muslimov A. E., Kanevsky V. M. Nanocrystalline films based on zinc oxide obtained in a single vacuum cycle // Russian nanotechnologies. – 2020. – Vol. 15, No. 6, pp. 775-780.

26. . Aleksanyan A. Yu. Production of p-Si/n-ZnO diode heterostructures and study of their current-voltage characteristics // Alternative Energy and Ecology (ISJAEE). – 2013, No. 6, pp. 23-27.

27. . Tarasov A. P. Luminescence of zinc oxide microstructures and the effect of surface plasma resonance and magnetic field on it. Diss. Cand. Phys.-Math. Sciences. – Moscow: MIPT, 2019, 125 p.