Electrical properties of IN^0,99SM^0,01SE and IN^0,99ER^0,01SE single crystals for solar cells

The temperature dependences of the electrical conductivity of non-irradiated and gamma-irradiated In_0,99Sm_0,01Se and In_0,99Er_0,01Se single crystals in the temperature range 125-300K have been studied. From the experimental data, it was revealed that when single crystals are irradiated with ã-quanta with a dose of 100 krad, uncontrolled defects are treated and the concentration of nonequilibrium charge carriers increases. That is, radiation leads to the perfection of crystals, which is an important factor for the efficient use of these materials in industrial electronics. The study of electrical conductivity makes it possible to determine the energy levels of defects in non-irradiated and gammairradiated In_0,99Sm_0,01Se and In_0,99Er_0,01Sе. single crystals.

It has been established that when single crystals of In_0,99Sm_0,01Se and In_0,99Er_0,01Se solid solutions are irradiated with a dose of 100 krad at low temperatures, the dependence ó_Т( ã) is not related to the heating of charge carriers by an electric field. The difference in the temperature dependence between unirradiated and irradiated crystals at low temperatures depends on the thermal depletion of defect centers, while at high temperatures the concentration of defect centers increases.

The activation energies were determined from the temperature dependences of electrical conductivity for nonirradiated and irradiated single crystals of In_0,99Sm_0,01Se and In_0,99Er_0,01Se solid solutions with a dose of 100 krad. It has been established that for a single crystal of the In_0,99Sm_0,01Se и In_0,99Er_0,01Se solid solution that was not irradiated and irradiated with a dose of 100 krad, the activation energies were, respectively, Е_an^ir =1,1eV and E_ai^r =0,56eV. For single crystals of In_0,99Er_0,01Se solid solutions, the activation energy does not change after irradiation. The activation energies determined from the slope of the temperature dependences of the electrical conductivity in non-irradiated and irradiated In_0,99Er_0,01Se crystals are the same and equal to Е_an^ir = E_ai^r =0,63 eV.

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