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EFFECT OF DEFORMATION ON THE PHOTOCURRENTS IN THE p-n-JUNCTIONS
https://doi.org/10.15518/isjaee.2016.15-18.024-030
Abstract
The paper investigates the effect of deformation on the photocurrent and photovoltage in the p-n-junctions. It was found that under illumination in the fundamental absorption edge with its own light, the semiconductor becomes sensitive to the effects of the strain. This allows you to control the speed of the electrons and holes photogeneration by an external impact. In this case, there is a possibility to control the photovoltage and photocurrent arising in semiconductor solar cells.
About the Authors
G. Gulyamov
Namangan Engineering Pedagogical Institute, Namangan
Uzbekistan
Uzbekistan
A. G. Gulyamov
Physico-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Uzbekistan
G. N. Majidova
Namangan Engineering Pedagogical Institute, Namangan
Uzbekistan
Uzbekistan
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Review
For citations:
Gulyamov G., Gulyamov A.G., Majidova G.N. EFFECT OF DEFORMATION ON THE PHOTOCURRENTS IN THE p-n-JUNCTIONS. Alternative Energy and Ecology (ISJAEE). 2016;(15-18):24-30. (In Russ.) https://doi.org/10.15518/isjaee.2016.15-18.024-030
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